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KR20150064517A - Organic Light Emitting Diode and Organic Light Emitting Display Device Using the Same - Google Patents
![Buffer assisted charge generation layer for tandem OLEDs Patent Grant Wang , et al. Nov [eMagin Corporation]](https://uspto.report/patent/grant/10483478/US10483478-20191119-D00000.png "Buffer assisted charge generation layer for tandem OLEDs Patent Grant Wang , et al. Nov [eMagin Corporation]")
Buffer assisted charge generation layer for tandem OLEDs Patent Grant Wang , et al. Nov [eMagin Corporation]
Investigation on the mechanism of charge generation in organic heterojunctions: Analysis of I–V and C–V characteristics - ScienceDirect
Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p-Type WOx Doped PEDOT:PSS and Li Doped ZnO Charge Generation Layer. | Semantic Scholar
Inverted Quantum-dot Light Emitting Diode using Solution Processed p-type WOx doped PEDOT:PSS and Li doped ZnO Charge Generation Layer | Kim, Hyo-Min; Kim, Jeonggi; Lee, Jieun; Jang, Jin | download
Full article: Effect of a P-doped hole transport and charge generation layer on single and two-tandem blue top-emitting organic light-emitting diodes
Solution-Processed Metal-Oxide p–n Charge Generation Junction for High-Performance Inverted Quantum-Dot Light-Emitting Diodes,ACS Applied Materials & Interfaces - X-MOL
Charge generation and collection in organohalide perovskite solar cells... | Download Scientific Diagram
Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generation | Nature Communications
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Charge generation track, just after the alpha particle strike normal to... | Download Scientific Diagram
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Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors
Charge generation and parasitic current in a reverse-biased p-n junction | Download Scientific Diagram
Understanding Your Residential Electricity Bill-Generation Charge - Soleeva Energy
![PDF] Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/250b086dfdaa305134a8c0528681c9942636fe8a/2-Figure2-1.png "PDF] Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics | Semantic Scholar")
PDF] Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics | Semantic Scholar
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The Journal of Physical Chemistry - JPC - #WeekendRead for JPC. This #OpenAccess #OA article from JPC C is on the Effect of Charge-Transfer State Energy on Charge Generation Efficiency via Singlet
A fourth-generation high-dimensional neural network potential with accurate electrostatics including non-local charge transfer | Nature Communications
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